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IRG7PH50K10D-EPBF - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

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IRG7PH50K10D-EPBF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRG7PH50K10D-EPBF

Datasheet Details

Part number	IRG7PH50K10D-EPBF
Manufacturer	International Rectifier
File Size	567.79 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRG7PH50K10D-EPBF Datasheet
Additional preview pages of the IRG7PH50K10D-EPBF datasheet.

IRG7PH50K10D-EPBF Product details

Features

Low VCE(ON) and switching losses 10µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 150°C Positive VCE (ON) Temperature Coefficient Base part number IRG7PH50K10DPBF IRG7PH50K10D-EPBF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=20V Clamped Inductive Load Current.

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Published: Mar 31, 2014 |