Datasheet Summary
- 97484
IRG7R313UPbF
PDP TRENCH IGBT
Features
Key Parameters l Advanced Trench IGBT Technology
VCE min
V l Optimized for Sustain and Energy Recovery
VCE(ON) typ. @ IC = 20A
V circuits in PDP applications l Low VCE(on) and Energy per Pulse (EPULSETM) for improved panel efficiency
IRP max @ TC= 25°C TJ max
°C l High repetitive peak current capability l Lead Free package
E n-channel
D-Pak IRG7R313UPbF
G Gate
C Collector
E Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area...