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IRGB15B60KD - INSULATED GATE BIPOLAR TRANSISTOR

Features

  • Low VCE (on) Non Punch Through IGBT Technology. www. DataSheet4U. com.
  • Low Diode VF.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Ultrasoft Diode Reverse Recovery Characteristics.
  • Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performance.
  • Low EMI.
  • Excellent Current Sharing in Parallel Operation. n-channel VCE.

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Full PDF Text Transcription

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PD - 94383D INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB15B60KD IRGS15B60KD IRGSL15B60KD VCES = 600V IC = 15A, TC=100°C Features • Low VCE (on) Non Punch Through IGBT Technology. www.DataSheet4U.com • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. G E tsc > 10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.
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