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IRGB20B60PD1PBF - SMPS IGBT

Key Features

  • n-channel Equivalent MOSFET Parameters  RCE(on) typ. = 158mΩ ID (FET equivalent) = 20A Benefits.
  • Parallel Operation for Higher Current.

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Full PDF Text Transcription for IRGB20B60PD1PBF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IRGB20B60PD1PBF. For precise diagrams, and layout, please refer to the original PDF.

SMPS IGBT PD - 95615 IRGB20B60PD1PbF C WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE Applications • • • • • • • • • • • • Telecom and Server SMPS PFC and ZVS SMPS ...

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ions • • • • • • • • • • • • Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Consumer Electronics Power Supplies Lead-Free NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability VCES = 600V VCE(on) typ. = 2.05V @ VGE = 15V IC = 13.0A G E Features n-channel Equivalent MOSFET Parameters  RCE(on) typ.

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