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IRGB30B60K - INSULATED GATE BIPOLAR TRANSISTOR

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International Rectifier

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IRGB30B60K INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRGB30B60K

Datasheet Details

Part number	IRGB30B60K
Manufacturer	International Rectifier
File Size	354.36 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB30B60K Datasheet
Additional preview pages of the IRGB30B60K datasheet.

Product details

Features

Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.95V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. TO-220AB IRGB30B60K www. DataShe.

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Published: Jun 5, 2007 |