Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. G E
tsc > 10µs, TJ=150°C
n-channel
VCE(on) typ. = 1.95V
Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. TO-220AB IRGB30B60K
www. DataShe.
Full PDF Text Transcription for IRGB30B60K (Reference)
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PD - 94799 INSULATED GATE BIPOLAR TRANSISTOR C IRGB30B60K IRGS30B60K IRGSL30B60K VCES = 600V IC = 50A, TC=100°C at TJ=175°C Features • • • • • Low VCE (on) Non Punch Thro...
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A, TC=100°C at TJ=175°C Features • • • • • Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.95V Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. TO-220AB IRGB30B60K www.DataSheet4U.
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IRGB30B60K Datasheet
