IRGB4630DPbF - Insulated Gate Bipolar Transistor

International Rectifier (now Infineon)

Download the IRGB4630DPbF datasheet PDF. This datasheet also covers the IRGS4630DPBF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

G Gate C Collector Benefits E Emitter Low VCE(ON) and switching losses High efficiency in a wide range of.

📥 Download Datasheet

IRGB4630DPbF insulated gate bipolar transistor by International Rectifier (now Infineon) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (IRGS4630DPBF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	IRGB4630DPbF
Manufacturer	International Rectifier (now Infineon)
File Size	1.20 MB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGB4630DPbF Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
IRGB4630DPbF	IGBT	Infineon
IRGB4620DPbF	IGBT	Infineon
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IRG4BC20F	INSULATED GATE BIPOLAR TRANSISTOR	IRF
IRG4BC20FD	INSULATED GATE BIPOLAR TRANSISTOR	IRF

Other Datasheets by International Rectifier (now Infineon)

Part Number	Description
IRGB4607DPbF	Insulated Gate Bipolar Transistor
IRGB4610DPBF	INSULATED GATE BIPOLAR TRANSISTOR
IRGB4615DPBF	Power MOSFET
IRGB4620DPBF	Power MOSFET
IRGB4045DPbF	INSULATED GATE BIPOLAR TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

IRGS4630DPbF IRGB4630DPbF IRGP4630D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 30A, TC =100°C C CC C C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.