• Part: IRGB5B120KDPBF
  • Description: INSULATED GATE BIPOLAR TRANSISTOR
  • Manufacturer: International Rectifier
  • Size: 308.45 KB
Download IRGB5B120KDPBF Datasheet PDF
International Rectifier
IRGB5B120KDPBF
IRGB5B120KDPBF is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
- 95617 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features - Low VCE (on) Non Punch Through IGBT Technology. - Low Diode VF. - 10µs Short Circuit Capability. - Square RBSOA. .. - Ultrasoft Diode Reverse Recovery Characteristics. - Positive VCE (on) Temperature Coefficient. - TO-220 Package. - Lead-Free VCES = 1200V IC = 6.0A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 2.75V Benefits - Benchmark Efficiency for Motor Control. - Rugged Transient Performance. - Low EMI. - Excellent Current Sharing in Parallel Operation. TO-220AB...