IRGB5B120KDPBF
IRGB5B120KDPBF is INSULATED GATE BIPOLAR TRANSISTOR manufactured by International Rectifier.
- 95617
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
- Low VCE (on) Non Punch Through IGBT Technology.
- Low Diode VF.
- 10µs Short Circuit Capability.
- Square RBSOA. ..
- Ultrasoft Diode Reverse Recovery Characteristics.
- Positive VCE (on) Temperature Coefficient.
- TO-220 Package.
- Lead-Free
VCES = 1200V IC = 6.0A, TC=100°C
G E tsc > 10µs, TJ=150°C n-channel
VCE(on) typ. = 2.75V
Benefits
- Benchmark Efficiency for Motor Control.
- Rugged Transient Performance.
- Low EMI.
- Excellent Current Sharing in Parallel Operation.
TO-220AB...