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IRGB8B60KPbF - INSULATED GATE BIPOLAR TRANSISTOR

Product Overview

International Rectifier

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IRGB8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR by International Rectifier - Datasheet Preview — Datasheet preview – IRGB8B60KPbF

Datasheet Details

Part number	IRGB8B60KPbF
Manufacturer	International Rectifier
File Size	453.29 KB
Description	INSULATED GATE BIPOLAR TRANSISTOR
Datasheet	IRGB8B60KPbF Datasheet
Additional preview pages of the IRGB8B60KPbF datasheet.

Product details

Features

Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Lead-Free. IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C VCES = 600V IC = 20A, TC=100°C G E tsc>10µs, TJ=150°C Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ.

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Published: May 30, 2007 |