IRGBC20M
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than parable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
Key Features
- Short circuit rated
- 10µs @ 125°C, V GE = 15V
- Switching-loss rating includes all "tail" losses
