Datasheet4U Logo Datasheet4U.com
International Rectifier (now Infineon) logo

IRGBC30MD2-S

Manufacturer: International Rectifier (now Infineon)
IRGBC30MD2-S datasheet preview

Datasheet Details

Part number IRGBC30MD2-S
Datasheet IRGBC30MD2-S_InternationalRectifier.pdf
File Size 310.46 KB
Manufacturer International Rectifier (now Infineon)
Description INSULATED GATE BIPOLAR TRANSISTOR
IRGBC30MD2-S page 2 IRGBC30MD2-S page 3

IRGBC30MD2-S Overview

Co-packaged IGBTs are a natural extension of International Rectifier's well known IGBT line. They provide the convenience of an IGBT and an ultrafast recovery diode in one package, resulting in substantial benefits to a host of high-voltage, high-current, applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability.

IRGBC30MD2-S Key Features

  • Short circuit rated -10µs @125°C, V GE = 15V
  • Switching-loss rating includes all "tail" losses TM
  • HEXFRED soft ultrafast diodes
  • Optimized for medium operating frequency ( 1 to 10kHz) See Fig. 1 for Current vs. Frequency curve
International Rectifier (now Infineon) logo - Manufacturer

More Datasheets from International Rectifier (now Infineon)

See all International Rectifier (now Infineon) datasheets

Part Number Description
IRGBC30MD2 INSULATED GATE BIPOLAR TRANSISTOR
IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR
IRGBC30M-S INSULATED GATE BIPOLAR TRANSISTOR
IRGBC30F INSULATED GATE BIPOLAR TRANSISTOR
IRGBC30FD2 INSULATED GATE BIPOLAR TRANSISTOR
IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR
IRGBC30K-S INSULATED GATE BIPOLAR TRANSISTOR
IRGBC30KD2 INSULATED GATE BIPOLAR TRANSISTOR
IRGBC30S INSULATED GATE BIPOLAR TRANSISTOR
IRGBC30U INSULATED GATE BIPOLAR TRANSISTOR

IRGBC30MD2-S Distributor

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts