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IRGP4660-EPbF - INSULATED GATE BIPOLAR TRANSISTOR

Download the IRGP4660-EPbF datasheet PDF. This datasheet also covers the IRGP4660DPbF variant, as both devices belong to the same insulated gate bipolar transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5μs short circuit SOA Lead-Free, RoHS compliant Benefits High efficiency in a wide range of.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGP4660DPbF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IRGP4660DPbF IRGP4660D-EPbF VCES = 600V IC = 60A, TC = 100°C tSC 5μs, TJ(max) = 175°C G C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C C VCE(on) typ. = 1.