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IRGS10B60KDPBF Datasheet INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier (now Infineon)

Download the IRGS10B60KDPBF datasheet PDF. This datasheet also includes the IRGB10B60KDPBF variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGB10B60KDPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Overview

PD - 94925A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF VCES = 600V IC = 12A,.

Key Features

  • Low VCE (on) Non Punch Through IGBT Technology.
  • Low Diode VF.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Ultrasoft Diode Reverse Recovery Characteristics.
  • Positive VCE (on) Temperature Coefficient.
  • Lead-Free G E tsc > 10µs, TJ=150°C n-channel Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performance.
  • Low EMI.
  • Excellent Current Sharing in Parallel Operation. VCE(.