Datasheet Summary
- 94925A
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF
VCES = 600V IC = 12A, TC=100°C
Features
- Low VCE (on) Non Punch Through IGBT Technology.
- Low Diode VF.
- 10µs Short Circuit Capability.
- Square RBSOA.
- Ultrasoft Diode Reverse Recovery Characteristics.
- Positive VCE (on) Temperature Coefficient.
- Lead-Free
G E tsc > 10µs, TJ=150°C n-channel
Benefits
- Benchmark Efficiency for Motor Control.
- Rugged Transient Performance.
- Low EMI.
- Excellent Current Sharing in Parallel Operation.
VCE(on) typ. = 1.8V
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TO-220AB IRGB10B60KD
D2Pak IRGS10B60KD Max.
600 22 12 44 44 22 10 44 ± 20...