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IRGS4086PbF - PDP Trench IGBT

Download the IRGS4086PbF datasheet PDF. This datasheet also covers the IRGB4086PbF variant, as both devices belong to the same pdp trench igbt family and are provided as variant models within a single manufacturer datasheet.

General Description

This IGBT is specifically designed for applications in Plasma Display Panels.

This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.

Key Features

  • l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRGB4086PbF-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRGS4045DPBF Insulated Gate Bipolar Transistor
IRGS4055PBF PDP Trench IGBT
IRGS4056DPbF INSULATED GATE BIPOLAR TRANSISTOR
IRGS4062DPBF Power MOSFET
IRGS4064DPBF Power MOSFET
IRGS4065PBF IGBT
IRGS4607DPBF Insulated Gate Bipolar Transistor
IRGS4610DPBF INSULATED GATE BIPOLAR TRANSISTOR
IRGS4615DPBF Power MOSFET
IRGS4620DPBF Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 96222 PDP TRENCH IGBT Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery Circuits in PDP Applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for Improved Panel Efficiency l High Repetitive Peak Current Capability l Lead Free Package IRGB4086PbF IRGS4086PbF Key Parameters VCE min VCE(ON) typ. @ IC = 70A IRP max @ TC= 25°C TJ max c 300 1.90 250 150 V V A °C C G E G C E G C E n-channel G G ate TO-220AB D2 Pak IRGB4086PbF IRGS4086PbF C C ollector E E m itter Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency.