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IRGS4620DPBF - Power MOSFET

This page provides the datasheet information for the IRGS4620DPBF, a member of the IRGB4620DPBF Power MOSFET family.

Features

  • Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Benefits High efficiency in a wide range of.

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IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 20A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.
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