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IRGSL4B60KD1PbF - Insulated Gate Bipolar Transistor

This page provides the datasheet information for the IRGSL4B60KD1PbF, a member of the IRGS4B60KD1PBF Insulated Gate Bipolar Transistor family.

Features

  • C VCES = 600V.
  • Low VCE (on) Non Punch Through IGBT Technology.
  • 10µs Short Circuit Capability.
  • Square RBSOA.
  • Positive VCE (on) Temperature Coefficient.
  • Maximum Junction Temperature rated at 175°C.
  • Lead-Free G E n-channel IC = 7.6A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 2.1V Benefits.
  • Benchmark Efficiency for Motor Control.
  • Rugged Transient Performance.
  • Low EMI.
  • Excellent Current Sharin.

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Full PDF Text Transcription

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PD - 95616A IRGB4B60KD1PbF IRGS4B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4B60KD1PbF ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free G E n-channel IC = 7.6A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 2.1V Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. Absolute Maximum Ratings TO-220 D2Pak TO-262 IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 Parameter Max.
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