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IRGSL4B60KD1PbF - Insulated Gate Bipolar Transistor

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International Rectifier

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IRGSL4B60KD1PbF Insulated Gate Bipolar Transistor by International Rectifier - Datasheet Preview — Datasheet preview – IRGSL4B60KD1PbF

Datasheet Details

Part number	IRGSL4B60KD1PbF
Manufacturer	International Rectifier
File Size	434.12 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	IRGSL4B60KD1PbF Datasheet
Note	This datasheet PDF includes multiple part numbers: IRGSL4B60KD1PbF, IRGS4B60KD1PBF. Please refer to the document for exact specifications by model.
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Product details

Features

C VCES = 600V.
Low VCE (on) Non Punch Through IGBT Technology.
10µs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Maximum Junction Temperature rated at 175°C.
Lead-Free G E n-channel IC = 7.6A, TC=100°C tsc > 10µs, TJ=150°C VCE(on) typ. = 2.1V Benefits.
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharin.

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Published: Feb 16, 2016 |