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IRGSL4B60KD1PbF Datasheet

Manufacturer: International Rectifier (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

IRGSL4B60KD1PbF datasheet preview

Datasheet Details

Part number IRGSL4B60KD1PbF
Datasheet IRGSL4B60KD1PbF IRGS4B60KD1PBF Datasheet (PDF)
File Size 434.12 KB
Manufacturer International Rectifier (now Infineon)
Description Insulated Gate Bipolar Transistor
IRGSL4B60KD1PbF page 2 IRGSL4B60KD1PbF page 3

IRGSL4B60KD1PbF Overview

PD - 95616A IRGB4B60KD1PbF IRGS4B60KD1PbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGSL4B60KD1PbF ULTRAFAST SOFT RECOVERY.

IRGSL4B60KD1PbF Key Features

  • Low VCE (on) Non Punch Through IGBT Technology
  • 10µs Short Circuit Capability
  • Square RBSOA
  • Positive VCE (on) Temperature Coefficient
  • Maximum Junction Temperature rated at 175°C
  • Lead-Free
  • Benchmark Efficiency for Motor Control
  • Rugged Transient Performance
  • Low EMI
  • Excellent Current Sharing in Parallel Operation
International Rectifier (now Infineon) logo - Manufacturer

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IRGSL4B60KD1PbF Distributor

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