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IRH7250 Datasheet Radiation Hardened Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: IRH7250 Radiation Hardened Power MOSFET Thru-Hole (TO-204AE) 200V, 26A, N-channel, Rad Hard HEXFET™ Technology.

General Description

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Key Features

  • Single event effect (SEE) hardened.
  • Low RDS(on).
  • Low total gate charge.
  • Proton tolerant.
  • Simple drive requirements.
  • Hermetically sealed.
  • Ceramic package.
  • ESD rating: Class 3A per MIL-STD-750, Method 1020 Product Summary.
  • BVDSS: 200V.
  • ID : 26A.
  • RDS(on),max : 110m.
  • QG,max : 170nC Potential.

More Datasheets from International Rectifier (now Infineon)

Part Number Description
IRH7230 Radiation Hardened Power MOSFET
IRH7054 Radiation Hardened Power MOSFET
IRH7130 RADIATION HARDENED POWER MOSFET
IRH7150 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRH7450 (IRH7450 / IRH8450) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
IRH7450SE TRANSISTOR N-CHANNEL
IRH8250 (IRH7250 / IRH8250) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
IRH8450 (IRH7450 / IRH8450) REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR
IRH9130 RADIATION HARDENED POWER MOSFET THRU-HOLE
IRH9150 RADIATION HARDENED POWER MOSFET THRU-HOLE

IRH7250 Distributor