IRHE7130 - RADIATION HARDENED POWER MOSFET SURFACE MOUNT
Features
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanch.
PD - 90713E
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
Product Summary
Part Number Radiation Level IRHE7230 100K Rads (Si) IRHE3230 300K Rads (Si) IRHE4230 IRHE8230 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.35 Ω 0.35 Ω 0.35 Ω 0.35 Ω ID 5.5A 5.5A 5.5A 5.5A
IRHE7230 JANSR2N7262U 200V, N-CHANNEL
REF: MIL-PRF-19500/601 ® ™ RAD-Hard HEXFET MOSFET TECHNOLOGY
QPL Part Number JANSR2N7262U JANSF2N7262U JANSG2N7262U JANSH2N7262U
LCC - 18
International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
IRHE7130 Datasheet
