• Part: IRHE93130
  • Description: RADIATION HARDENED POWER MOSFET SURFACE MOUNT
  • Category: MOSFET
  • Manufacturer: International Rectifier
  • Size: 148.26 KB
Download IRHE93130 Datasheet PDF
International Rectifier
IRHE93130
Features : n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page -6.5 -4.1 -26 25 0.2 ±20 165 -6.5 2.5 -22 -55 to 150 300 ( for 5s) 0.42 (Typical) Pre-Irradiation Units A W/°C V m J A m J V/ns o C g .irf. 2/20/03 IRHE9130 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS...