IRHE93230 - (IRHE9230 / IRHE93230) RADIATION HARDENED POWER MOSFET SURFACE MOUNT
This page provides the datasheet information for the IRHE93230, a member of the IRHE9230 (IRHE9230 / IRHE93230) RADIATION HARDENED POWER MOSFET SURFACE MOUNT family.
Features
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Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Sin.
PD - 91804D
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
Product Summary
Part Number Radiation Level IRHE9230 100K Rads (Si) IRHE93230 300K Rads (Si) RDS(on) 0.80 Ω 0.80 Ω ID -4.0A -4.0A
IRHE9230 200V, P-CHANNEL
REF: MIL-PRF-19500/630 ® ™ RAD-Hard HEXFET MOSFET TECHNOLOGY
QPL Part Number JANSR2N7390U JANSF2N7390U
International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to www.DataSheet4U.
IRHE93230 Datasheet
