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IRHF7110 - RADIATION HARDENED POWER MOSFET

This page provides the datasheet information for the IRHF7110, a member of the IRHF4110 RADIATION HARDENED POWER MOSFET family.

Features

  • ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanc.

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Datasheet Details

Part number IRHF7110
Manufacturer International Rectifier
File Size 612.29 KB
Description RADIATION HARDENED POWER MOSFET
Datasheet download datasheet IRHF7110 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com PD - 90671D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number IRHF7110 IRHF3110 IRHF4110 IRHF8110 Radiation Level 100K Rads (Si) 300K Rads (Si) 600K Rads (Si) 1000K Rads (Si) R DS(on) 0.60 Ω 0.60 Ω 0.60 Ω 0.60 Ω IRHF7110 100V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY ™ ® ID 3.5A 3.5A 3.5A 3.5A TO-39 International Rectifier’s RADHard ogy provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
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