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IRHF9130 - P-Channel Power MOSFET

Description

IR HiRel RADHard™ HEXFET® MOSFET technology provides high performance power MOSFETs for space applications.

This technology has long history of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Features

  • Single Event Effect (SEE) Hardened.
  • Low RDS(on).
  • Low Total Gate Charge.
  • Proton Tolerant.
  • Simple Drive Requirements.
  • Hermetically Sealed.
  • Ceramic Package.
  • Light Weight.
  • ESD Rating: Class 1B per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter Value Pre-Irradiation Units ID1 @ VGS = -12V, TC = 25°C Continuous Drain Current -6.5 ID2 @ VGS = -12V, TC = 100°C Continuous Drain Current -4.1 IDM @ TC = 25°C Pulsed Drain Current .

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Full PDF Text Transcription

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RADIATION HARDENED POWER MOSFET THRU-HOLE TO-205AF (TO-39) PD-90882H IRHF9130 JANSR2N7389 100V, P-CHANNEL REF: MIL-PRF-19500/630 RAD Hard™HEXFET ® TECHNOLOGY Product Summary Part Number Radiation Level IRHF9130 100 kRads(Si) IRHF93130 300 kRads(Si) RDS(on) 0.30 0.30 ID -6.5A -6.5A QPL Part Number JANSR2N7389 JANSF2N7389 Description IR HiRel RADHard™ HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has long history of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
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