IRHF9130 - P-Channel Power MOSFET

Product Overview

International Rectifier

Part number	IRHF9130
Manufacturer	International Rectifier
File Size	1.13 MB
Description	P-Channel Power MOSFET
Datasheet	IRHF9130 Datasheet
Additional preview pages of the IRHF9130 datasheet.

IR HiRel RADHard™ HEXFET® MOSFET technology provides high performance power MOSFETs for space applications.

Single Event Effect (SEE) Hardened.
Low RDS(on).
Low Total Gate Charge.
Proton Tolerant.
Simple Drive Requirements.
Hermetically Sealed.
Ceramic Package.
Light Weight.
ESD Rating: Class 1B per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter Value Pre-Irradiation Units ID1 @ VGS = -12V, TC = 25°C Continuous Drain Current -6.5 ID2 @ VGS = -12V, TC = 100°C Continuous Drain Current -4.1 IDM @ TC = 25°C Pulsed Drain Current .

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Published: Oct 16, 2006 |