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IRHLG7670Z4 - 60V 100kRad Hi-Rel Dual 2N 2P Channel TID Hardened MOSFET

Features

  • n n n n n n n n n 5V CMOS and TTL Compatible Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings (Per Die) Parameter ID@ VGS = ±4.5V, TC= 25°C ID@ VGS = ±4.5V, TC=100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage.

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Datasheet Details

Part number IRHLG7670Z4
Manufacturer International Rectifier
File Size 351.42 KB
Description 60V 100kRad Hi-Rel Dual 2N 2P Channel TID Hardened MOSFET
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www.DataSheet4U.com PD-97191B 2N7635M1 IRHLG7670Z4 60V, Combination 2N-2P-CHANNEL RADIATION HARDENED TECHNOLOGY LOGIC LEVEL POWER MOSFET ™ THRU-HOLE (MO-036AB) Product Summary Part Number IRHLG7670Z4 IRHLG7630Z4 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.6Ω 1.25Ω 0.6Ω 1.25Ω ID 1.07A -0.71A 1.07A -0.71A CHANNEL N P N P MO-036AB International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.
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