n n n n n n n n n
5V CMOS and TTL Compatible Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings (Per Die)
Parameter
ID@ VGS = ±4.5V, TC= 25°C ID@ VGS = ±4.5V, TC=100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage.
Full PDF Text Transcription for IRHLG7670Z4 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRHLG7670Z4. For precise diagrams, and layout, please refer to the original PDF.
TECHNOLOGY LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB) Product Summary Part Number IRHLG7670Z4 IRHLG7630Z4 Radiation Level 100K Rads (Si) 300K Rads (Si) RDS(on) 0.6Ω 1.25Ω 0.6Ω 1.25Ω ID 1.07A -0.71A 1.07A -0.71A CHANNEL N P N P MO-036AB International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event bur
More Datasheets from International Rectifier (now Infineon)
IRHLG7670Z4 Datasheet
