IRHLG7670Z4 datasheet by International Rectifier (now Infineon).
| Part number | IRHLG7670Z4 |
|---|---|
| Datasheet | IRHLG7670Z4_InternationalRectifier.pdf |
| File Size | 351.42 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | 60V 100kRad Hi-Rel Dual 2N 2P Channel TID Hardened MOSFET |
|
|
The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage parator and operational amplifiers.
View all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRHLG730Z4 | (IRHLG7x0Z4) POWER MOSFET |
| IRHLG73110 | Power MOSFET |
| IRHLG73214 | Power MOSFET |
| IRHLG770Z4 | (IRHLG7x0Z4) POWER MOSFET |
| IRHLG77110 | 100V 100kRad Hi-Rel Quad N-Channel TID Hardened MOSFET |
| IRHLG7970Z4 | 60V 100kRad Hi-Rel Quad P-Channel TID Hardened MOSFET |
| IRHLA7670Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE |
| IRHLA770Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE |
| IRHLA7970Z4 | RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE |
| IRHLF630Z4 | (IRHLF6x0Z4) POWER MOSFET |
