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IRHLUC730Z4 - Power MOSFET

Features

  • n n n n n n n n n n 5V CMOS and TTL Compatible Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Complimentary P-Channel Available IRHLUC7970Z4 Absolute Maximum Ratings (Per Die) Parameter ID @ VGS = 4.5V, TC = 25°C ID @ VGS = 4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissip.

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PD-97573 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) Product Summary Part Number Radiation Level RDS(on) ID IRHLUC770Z4 100K Rads (Si) 0.75Ω 0.89A IRHLUC730Z4 300K Rads (Si) 0.75Ω 0.89A 2N7617UC IRHLUC770Z4 60V, DUAL-N CHANNEL TECHNOLOGY ™ International Rectifier’s R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments.The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation.This is achieved while maintaining single event gate rupture and single event burnout immunity.
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