IRHM7260 Datasheet | International Rectifier

Features : ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight - Current limited by pin diameter For footnotes refer to the last page 35- 25 161 250 2.0 ±20 500 35 25 5.7 -55 to 150 Pre-Irradiation Units A W/°C V m J A m J V/ns o 300 ( 0.063 in.(1.6mm) from case for 10s) 9.3 (Typical ) g .irf. 8/14/01 IRHM7260 .. Pre-Irradiation @ Tj = 25°C (Unless Otherwise Specified) Min 200 — — — 2.0 9.0 — — — — — — — — — — — — Electrical Characteristics Parameter Typ Max Units — 0.26 — — — — — — — — — — — — — — — 6.8 — — 0.070 0.077 4.0 — 25 250 100 -100 290 42 120 50 200 200 130 — V V/°C Ω V S( ) µA Ω Test Conditions VGS = 0V, ID = 1.0m A Reference to 25°C, ID = 1.0m A VGS = 12V, ID =25A ➃ VGS = 12V, ID = 35A VDS = VGS, ID = 1.0m A VDS > 15V, IDS = 25A ➃ VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID =35A VDS = 100V VDD = 100V, ID =35A VGS =12V, RG = 2.35Ω BVDSS Drain-to-Source Breakdown Voltage ∆ BV DSS / ∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse...