IRHM8150 Datasheet RADIATION HARDENED POWER MOSFET THRU-HOLE

Manufacturer: International Rectifier (now Infineon)

IRHM8150 radiation hardened power mosfet thru-hole by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRHM8150
Manufacturer	International Rectifier (now Infineon)
File Size	482.48 KB
Description	RADIATION HARDENED POWER MOSFET THRU-HOLE
Download	IRHM8150 Download (PDF)

Overview

www.datasheet4u.com PD - 90675C RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number Radiation Level IRHM7150 100K Rads (Si) IRHM3150 300K Rads (Si) IRHM4150 IRHM8150 600K Rads (Si) 1000K Rads (Si) RDS(on) 0.065Ω 0.065Ω 0.065Ω 0.065Ω REF: MIL-PRF-19500/603 ® RAD Hard HEXFET TECHNOLOGY IRHM7150 JANSR2N7268 100V, N-CHANNEL ID 34A 34A 34A 34A QPL Part Number JANSR2N7268 JANSF2N7268 JANSG2N7268 JANSH2N7268 TO-254AA International Rectifiers RADHard ogy provides high performance power MOSFETs for space applications.

This technology has over a decade of proven performance and reliability in satellite applications.

These devices have been characterized for both Total Dose and Single Event Effects (SEE).

Key Features

! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanc.

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