IRHMB54Z60 Datasheet | International Rectifier

Features : n n n n n n n n n n Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight - Current is limited by package For footnotes refer to the last page 45- 45- 180 208 1.67 ±20 1250 45 20.8 1.08 -55 to 150 Pre-Irradiation Units A W/°C V m J A m J V/ns o C g 300 (0.063 in. /1.6 mm from case for 10s) 8.0 (Typical) .irf. 03/08/05 .. IRHMB57Z60 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆ T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current Min - - 2.0 73 - - - - - - - - - - - - Typ Max Units - 0.03 - - - - - - - - - - - -...