IRHMS9A7264 Datasheet | International Rectifier

Features - Single event effect (SEE) hardened (up to LET of 88.2 Me V- cm2/mg) - Low RDS(on) - Fast switching - Low total gate charge - Simple drive requirements - Hermetically sealed - Electrically isolated - Ceramic eyelets - Light weight - ESD rating: Class 3B per MIL-STD-750, Method 1020 Potential Applications - DC-DC converter - Motor drives Product Summary - BVDSS: 250V - ID : 45A- - RDS(on),max : 19.5m - QGmax : 165n C TO-254AA Low Ohmic Product Validation Qualified according to MIL-PRF-19500 for space applications Description IR Hi Rel R9 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 88.2 Me V- cm2/mg. Their bination of low RDS(on) and fast switching times will allow for better performance in applications such as DC-DC converters or motor drives. These devices retain all of the wellestablished advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters. Ordering Information Table 1 Ordering options Part number Package Low-Ohmic TO-254AA IRHMS9A3264 Low-Ohmic TO-254AA Screening Level COTS COTS TID Level 100 krad (Si) 300 krad (Si) Please read the Important Notice and Warnings at the end of this document .infineon./irhirel page 1 of 14 2022-10-31 Radiation Hardened Power MOSFET Thru-Hole (TO-254AA Low Ohmic) Table of contents Table of contents Features...