IRHMS9A7264 Datasheet Radiation Hardened Power MOSFET

Manufacturer: International Rectifier (now Infineon)

IRHMS9A7264 radiation hardened power mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRHMS9A7264
Manufacturer	International Rectifier (now Infineon)
File Size	596.19 KB
Description	Radiation Hardened Power MOSFET
Download	IRHMS9A7264 Download (PDF)

General Description

IR HiRel R9 technology provides superior power MOSFETs for space applications.

These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 88.2 MeV·cm2/mg.

Their combination of low RDS(on) and fast switching times will allow for better performance in applications such as DC-DC converters or motor drives.

Overview

IRHMS9A7264 Radiation Hardened Power MOSFET Thru-Hole (TO-254AA Low Ohmic) 250V, 45A, N-channel, R9 Superjunction Technology.

Key Features

Single event effect (SEE) hardened (up to LET of 88.2 MeV.
cm2/mg).
Low RDS(on).
Fast switching.
Low total gate charge.
Simple drive requirements.
Hermetically sealed.
Electrically isolated.
Ceramic eyelets.
Light weight.
ESD rating: Class 3B per MIL-STD-750, Method 1020 Potential.

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