IRHMS9A97064 Datasheet | International Rectifier

Features - Single event effect (SEE) hardened (up to LET of 92.4 Me V- cm2/mg) - Low RDS(on) - Improved SOA for linear mode operation - Fast switching - Low total gate charge - Simple drive requirements - Hermetically sealed - Electrically isolated - Ceramic eyelets - ESD rating: Class 3B per MIL-STD-750, Method 1020 Potential Applications - DC-DC converter - Motor drives - Power distribution - Latching current limiter Product Validation Product Summary - BVDSS: -60V - ID : -45A- - RDS(on), max : 12.5m - QG, max: 221n C - REF: MIL-PRF-19500/791 TO-254AA Low Ohmic Qualified according to MIL-PRF-19500 for space applications Description IR Hi Rel R9 technology provides superior power MOSFETs for space applications. This family of p-channel MOSFETs are the first radiation hardened devices that are based on a superjunction technology. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 92.4 Me V- cm2/mg. Their bination of low RDS(on) and improved SOA allows for better performance in applications such as Latching Current Limiters (LCL), Solid-State Power Controllers (SSPC) or DC-DC converters. These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters. Ordering Information Table 1 Ordering options Part number Package Low-Ohmic TO-254AA JANSR2N7664T1 Low-Ohmic TO-254AA IRHMS9A93064 Low-Ohmic TO-254AA JANSF2N7664T1 Low-Ohmic TO-254AA Screening Level COTS JANS COTS...