IRHMS9A97064 Datasheet MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: IRHMS9A97064 (JANSR2N7664T1) Radiation Hardened Power MOSFET Thru-Hole (TO-254AA Low Ohmic) -60V, -45A, P-channel, R9 Superjunction Technology.

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IRHMS9A97064 mosfet by International Rectifier (now Infineon) - Datasheet Preview

Datasheet Details

Part number	IRHMS9A97064
Manufacturer	International Rectifier (now Infineon)
File Size	537.34 KB
Description	MOSFET
Download	IRHMS9A97064 Download (PDF)

General Description

IR HiRel R9 technology provides superior power MOSFETs for space applications.

This family of p-channel MOSFETs are the first radiation hardened devices that are based on a superjunction technology.

These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 92.4 MeV·cm2/mg.

Key Features

Single event effect (SEE) hardened (up to LET of 92.4 MeV.
cm2/mg).
Low RDS(on).
Improved SOA for linear mode operation.
Fast switching.
Low total gate charge.
Simple drive requirements.
Hermetically sealed.
Electrically isolated.
Ceramic eyelets.
ESD rating: Class 3B per MIL-STD-750, Method 1020 Potential.

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