IRHMS9A97260 Datasheet | International Rectifier

Features - Single event effect (SEE) hardened (up to LET of 90.5 Me V- cm2/mg) - Low RDS(on) - Improved SOA for linear mode operation - Fast switching - Low total gate charge - Simple drive requirements - Hermetically sealed - Electrically isolated - Ceramic eyelets - Light weight - ESD rating: Class 3B per MIL-STD-750, Method 1020 Potential Applications - DC-DC converter - Motor drives - Power distribution - Latching current limiter Product Validation Product Summary - BVDSS: -200V - ID : -45A- - RDS(on), max : 34m - QG, max: 230n C - REF: MIL-PRF-19500/791 TO-254AA Low Ohmic Qualified according to MIL-PRF-19500 for space applications Description IR Hi Rel R9 technology provides superior power MOSFETs for space applications. This family of p-channel MOSFETs are the first radiation hardened devices that are based on a superjunction technology. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90.5 Me V- cm2/mg. Their bination of low RDS(on) and improved SOA allows for better performance in applications such as Latching Current Limiters (LCL), Solid-State Power Controllers (SSPC) or DC-DC converters. These devices retain all of the well-established advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical parameters. Ordering Information Table 1 Ordering options Part number Package TO-254AA Low-Ohmic JANSR2N7666T1 TO-254AA Low-Ohmic IRHMS9A93260 TO-254AA Low-Ohmic JANSF2N7666T1 TO-254AA...