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IRHN7150 Datasheet Radiation Hardened Power MOSFET

Manufacturer: International Rectifier (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

IRHN7150 datasheet preview

Datasheet Details

Part number	IRHN7150
Manufacturer	International Rectifier (now Infineon)
File Size	1.56 MB
Description	Radiation Hardened Power MOSFET
Datasheet	IRHN7150 IRHN3150 Datasheet (PDF)

IRHN7150 Overview

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space

IRHN7150 Key Features

Single event effect (SEE) hardened - Low RDS(on) - Low total gate charge - Simple drive requirements - Hermetically seal
BVDSS: 100V - ID : 34A - RDS(on),max : 65m - QG,max : 160nC - REF: MIL-PRF-19500/603

IRHN7150 Applications

DC-DC converter - Motor drives

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRHN7130	Radiation Hardened Power MOSFET
IRHN7230	N-Channel Transistor
IRHN7250	Radiation Hardened Power MOSFET
IRHN7250SE	Radiation Hardened Power MOSFET
IRHN7450	(IRHN7450 / IRHN8450) HEXFET TRANSISTOR
IRHN7450SE	TRANSISTOR N-CHANNEL
IRHN7C50SE	N-Channel Transistor
IRHN2C50SE	N-Channel Transistor
IRHN3150	Radiation Hardened Power MOSFET
IRHN4150	RADIATION HARDENED POWER MOSFET

IRHN7150 Distributor