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IRHN7150

Manufacturer: International Rectifier (now Infineon)

IRHN7150 datasheet by International Rectifier (now Infineon).

This datasheet includes multiple variants, all published together in a single manufacturer document.

IRHN7150 datasheet preview

IRHN7150 Datasheet Details

Part number IRHN7150
Datasheet IRHN7150 IRHN3150 Datasheet (PDF)
File Size 1.56 MB
Manufacturer International Rectifier (now Infineon)
Description Radiation Hardened Power MOSFET
IRHN7150 page 2 IRHN7150 page 3

IRHN7150 Overview

IR HiRel rad hard HEXFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).

IRHN7150 Key Features

  • Single event effect (SEE) hardened
  • Low RDS(on)
  • Low total gate charge
  • Simple drive requirements
  • Hermetically sealed
  • Electrically isolated
  • Ceramic eyelets
  • Light weight
  • Surface Mount
  • ESD rating: Class 3A per MIL-STD-750, Method 1020
International Rectifier (now Infineon) logo - Manufacturer

More Datasheets from International Rectifier (now Infineon)

View all International Rectifier (now Infineon) datasheets

Part Number Description
IRHN7130 Radiation Hardened Power MOSFET
IRHN7230 N-Channel Transistor
IRHN7250 Radiation Hardened Power MOSFET
IRHN7250SE Radiation Hardened Power MOSFET
IRHN7450 (IRHN7450 / IRHN8450) HEXFET TRANSISTOR
IRHN7450SE TRANSISTOR N-CHANNEL
IRHN7C50SE N-Channel Transistor
IRHN2C50SE N-Channel Transistor
IRHN3150 Radiation Hardened Power MOSFET
IRHN4150 RADIATION HARDENED POWER MOSFET

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