| Part number | IRHN9130 |
|---|---|
| Datasheet | IRHN9130_InternationalRectifier.pdf |
| File Size | 222.27 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | P-CHANNEL TRANSISTOR |
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Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.886 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR -100 Volt, 0.30Ω , RAD HARD HEXFET International Rectifier’s P-channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radiation test...
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRHN9150 | P-CHANNEL TRANSISTOR |
| IRHN9230 | P-CHANNEL TRANSISTOR |
| IRHN9250 | RADIATION HARDENED POWER MOSFET |
| IRHN2C50SE | N-Channel Transistor |
| IRHN3150 | Radiation Hardened Power MOSFET |
| IRHN4150 | RADIATION HARDENED POWER MOSFET |
| IRHN7130 | Radiation Hardened Power MOSFET |
| IRHN7150 | Radiation Hardened Power MOSFET |
| IRHN7230 | N-Channel Transistor |
| IRHN7250 | Radiation Hardened Power MOSFET |
