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IRHNA597064 - RADIATION HARDENED POWER MOSFET

This page provides the datasheet information for the IRHNA597064, a member of the IRHNA593064 RADIATION HARDENED POWER MOSFET family.

Features

  • n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Vol.

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Full PDF Text Transcription

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www.DataSheet4U.com PD-94604B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) Product Summary Part Number Radiation Level RDS(on) IRHNA597064 100K Rads (Si) 0.016Ω IRHNA593064 300K Rads (Si) 0.016Ω ID -56A* -56A* IRHNA597064 60V, P-CHANNEL 5 TECHNOLOGY ™ SMD-2 International Rectifier’s R5 TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
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