Datasheet4U Logo Datasheet4U.com

IRHNA7460SE - N-CHANNEL TRANSISTOR

Features

  • n n n n n n n n n n n n n Radiation Hardened up to 1 x 10 5 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Lightweight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C I D @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C.

📥 Download Datasheet

Datasheet preview – IRHNA7460SE

📁 Similar Datasheet

  • IRH-12-12.5-T110 - Encapsulated 150-Watt Isolated DC-DC Converter (muRata)
  • IRH-24-6.3-T110 - Encapsulated 150-Watt Isolated DC-DC Converter (muRata)
  • IRH-5-30-T110 - Encapsulated 150-Watt Isolated DC-DC Converter (muRata)
  • IRH3 - INCREMENTAL HOLLOW-SHAFT ENCODER (HEIDENHAIN)
  • IRH310 - INCREMENTAL HOLLOW-SHAFT ENCODER (HEIDENHAIN)
  • IRH320 - INCREMENTAL HOLLOW-SHAFT ENCODER (HEIDENHAIN)
  • IRH360 - INCREMENTAL HOLLOW-SHAFT ENCODER (HEIDENHAIN)
  • IRHM2C50SE - N-Channel Transistor (IRF)
  • IRHM53260 - (IRHM5x260) RADIATION HARDENED POWER MOSFET THRU-HOLE (IRF)
  • IRHM54260 - (IRHM5x260) RADIATION HARDENED POWER MOSFET THRU-HOLE (IRF)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Previous Datasheet Index Next Data Sheet Provisional Data Sheet No. PD-9.1399A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTOR IRHNA7460SE N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD 500 Volt, 0.32Ω, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds.
Published: |