IRHNB4160 datasheet by International Rectifier (now Infineon).
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | IRHNB4160 |
|---|---|
| Datasheet | IRHNB4160 IRHNB3160 Datasheet (PDF) |
| File Size | 249.92 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | RADIATION HARDENED POWER MOSFET |
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This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The bination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
View all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRHNB3160 | RADIATION HARDENED POWER MOSFET |
| IRHNB7064 | RADIATION HARDENED POWER MOSFET |
| IRHNB7160 | RADIATION HARDENED POWER MOSFET |
| IRHNB7260 | RADIATION HARDENED POWER MOSFET |
| IRHNB7264SE | RADIATION HARDENED POWER MOSFET |
| IRHNB7360SE | RADIATION HARDENED POWER MOSFET |
| IRHNB7460SE | RADIATION HARDENED POWER MOSFET |
| IRHNB7Z60 | RADIATION HARDENED POWER MOSFET |
| IRHNB8160 | RADIATION HARDENED POWER MOSFET |
| IRHN2C50SE | N-Channel Transistor |
