IRHNB4160 - RADIATION HARDENED POWER MOSFET

This page provides the datasheet information for the IRHNB4160, a member of the IRHNB3160 RADIATION HARDENED POWER MOSFET family.

Product Overview

International Rectifier

Part number	IRHNB4160
Manufacturer	International Rectifier
File Size	249.92 KB
Description	RADIATION HARDENED POWER MOSFET
Datasheet	IRHNB4160 Datasheet
Additional preview pages of the IRHNB4160 datasheet.

! ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Sin.

Other Datasheets by International Rectifier

Published: Oct 15, 2006 |