| Part number | IRHNB7360SE |
|---|---|
| Datasheet | IRHNB7360SE_InternationalRectifier.pdf |
| File Size | 275.63 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | RADIATION HARDENED POWER MOSFET |
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PD - 91740B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) Product Summary Part Number IRHNB7360SE Radiation Level RDS(on) 100K Rads (Si) 0.20Ω ID 24A IRHNB7360SE 400V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY ® SMD-3 International Rectifiers RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and...
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| IRHNB7064 | RADIATION HARDENED POWER MOSFET |
| IRHNB7160 | RADIATION HARDENED POWER MOSFET |
| IRHNB7260 | RADIATION HARDENED POWER MOSFET |
| IRHNB7264SE | RADIATION HARDENED POWER MOSFET |
| IRHNB7460SE | RADIATION HARDENED POWER MOSFET |
| IRHNB7Z60 | RADIATION HARDENED POWER MOSFET |
| IRHNB3160 | RADIATION HARDENED POWER MOSFET |
| IRHNB4160 | RADIATION HARDENED POWER MOSFET |
| IRHNB8160 | RADIATION HARDENED POWER MOSFET |
| IRHN2C50SE | N-Channel Transistor |
