Download the IRHNJ4130 datasheet PDF.
This datasheet also covers the IRHNJ3130 variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.
Key Features
n n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Sin.
Note: The manufacturer provides a single datasheet file (IRHNJ3130_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for IRHNJ4130 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRHNJ4130. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com PD - 93820 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ7130 100K Rads (Si) IRHNJ3130 300K...
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ry Part Number Radiation Level IRHNJ7130 100K Rads (Si) IRHNJ3130 300K Rads (Si) IRHNJ4130 600K Rads (Si) IRHNJ8130 1000K Rads (Si) RDS(on) 0.18Ω 0.18Ω 0.18Ω 0.18Ω ID 14.4A 14.4A 14.4A 14.4A IRHNJ7130 100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY ™ ® SMD-0.5 International Rectifier’s RAD-HardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
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IRHNJ4130 Datasheet
