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IRHNJ57230 - RADIATION HARDENED POWER MOSFET

This page provides the datasheet information for the IRHNJ57230, a member of the IRHNJ53230 RADIATION HARDENED POWER MOSFET family.

Features

  • n n n n n n n n n n Single Event Effect (SEE) Hardened Ultra low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Volta.

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Full PDF Text Transcription

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www.DataSheet4U.com PD - 93753A RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) Product Summary Part Number Radiation Level IRHNJ57230 100K Rads (Si) IRHNJ53230 300K Rads (Si) IRHNJ54230 600K Rads (Si) IRHNJ58230 1000K Rads (Si) RDS(on) 0.20Ω 0.20Ω 0.20Ω 0.25Ω ID 13A 13A 13A 13A IRHNJ57230 200V, N-CHANNEL 4 # TECHNOLOGY c SMD-0.5 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
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