IRHNJ57230
Features
: n n n n n n n n n n
Single Event Effect (SEE) Hardened Ultra low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight For footnotes refer to the last page 13 8.2 52 75 0.6 ±20 60 13 7.5 4.4 -55 to 150 300 ( for 5s ) 1.0 ( Typical )
Pre-Irradiation
Units A
W/°C
V m J A m J V/ns o
C g
.irf.
07/22/02
Data Sheet 4 U .
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Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise...
