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IRHQ53110 Datasheet (IRHQ5x110) RADIATION HARDENED POWER MOSFET SURFACE MOUNT

Manufacturer: International Rectifier (now Infineon)

Overview: www.DataSheet4U.com PD - 94211A IRHQ57110 RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level IRHQ57110 100K Rads (Si) IRHQ53110 IRHQ54110 300K Rads (Si) 600K Rads (Si) RDS(on) 0.27Ω 0.27Ω 0.27Ω 0.29Ω ID 4.6A 4.6A 4.6A 4.6A 100V, Quad N-CHANNEL RAD-Hard HEXFET ™ ® 4 # TECHNOLOGY IRHQ58110 1000K Rads (Si) LCC-28 International Rectifier’s RAD-HardTM HEXFET® MOSFET Technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

Download the IRHQ53110 datasheet PDF. This datasheet also includes the IRHQ57110 variant, as both parts are published together in a single manufacturer document.

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Key Features

  • n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface Mount Light Weight Absolute Maximum Ratings (Per Die) Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source V.

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