IRHSLNA54064 Datasheet | International Rectifier

Description : The Synch Fet family of Co-Pack RAD-Hard MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. RAD-Hard MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. bining this technology with International Rectifier’s low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of Military and Space applications. Features : n Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode n Ideal for Synchronous Rectifiers in DC-DC n n n n Converters up to 75A Output Low Conduction Losses Low Switching Losses Low Vf Schottky Rectifier Refer to IRHSNA57064 for Lower RDS(on) Absolute Maximum Ratings Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR IF (AV)@ TC = 25°C IF (AV)@ TC =100°C TJ, TSTG Continuous Drain or Source Current Continuous Drain or Source Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➃ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Schottky and Body Diode Avg. Forward Current ➂ Schottky and Body Diode Avg. Forward Current ➂ Opeating and Storage Temperature Range Pckg. Mounting Surface Temp. Weight - Current is limited by package For footnotes refer to the last page Pre-Irradiation Units 75- 75- 300 250 2.0 ±20 370 75 25 75- 75- -55 to 150 300 (for 5s) 3.3 (Typical) W/°C V m J A m J A °C g .irf. 08/07/02 .Data Sheet.in IRHSLNA57064 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter BVDSS RDS(on) VGS(th) gfs IDSS Drain-to-Source Breakdown Voltage Static Drain-to-Source On-State Resistance Gate Threshold Voltage Forward Transconductance Zero Gate Voltage Drain Current Min - 2.0 45 - - - - - - - - - - - - Typ Max Units - - - - - - - 6.1...