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IRIS-G6351S Description

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IRIS-G6351S Key Features

  • Oscillator is provided on the monolithic control with adopting On-ChipTrimming technology
  • Small temperature characteristics variation by adopting a parator to pensate for temperature on the control part
  • Low start-up circuit current (50uA max)
  • Built-in Active Low-Pass Filter for stabilizing the operation in case of light load
  • Avalanche energy guaranteed MOSFET with high VDSS
  • The built-in power MOSFET simplifies the surge absorption circuit since the MOSFET guarantees the avalanche energy
  • No VDSS de-rating is required
  • Built-in constant voltage drive circuit
  • Various kinds of protection functions
  • Pulse-by-pulse Overcurrent Protection (OCP)