Datasheet Details
| Part number | IRL2310 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 81.61 KB |
| Description | Power MOSFET |
| Datasheet | IRL2310_InternationalRectifier.pdf |
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Overview: .. PD - 9.1275 PRELIMINARY IRL2310 HEXFET ® Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS(on) Specified at V GS= 4.
| Part number | IRL2310 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 81.61 KB |
| Description | Power MOSFET |
| Datasheet | IRL2310_InternationalRectifier.pdf |
|
|
|
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on resistance per silicon area.
This benefit, bined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of application.
The TO-220 package is universally preferred for all mercial-industrial applications at power dissipation levels to approximately 50 watts.
| Part Number | Description |
|---|---|
| IRL2203N | Power MOSFET |
| IRL2203NL | Power MOSFET |
| IRL2203NLPbF | Power MOSFET |
| IRL2203NPBF | Power MOSFET |
| IRL2203NS | Power MOSFET |
| IRL2203NSPbF | Power MOSFET |
| IRL2203S | Power MOSFET |
| IRL2505 | Power MOSFET |
| IRL2505L | Power MOSFET |
| IRL2505LPBF | HEXFET Power MOSFET |