Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- RC E 4 - DRAIN
3X
1 .4 0 (.0 55 ) 1 .1 5 (.0 45 )
2.54 (.100)
3X
0.93 (.037) 0.69 (.027)
0 .3 6 (.01 4) M B A M
3X
0.55 (.022) 0.46 (.018)
2.92 (.115) 2.64 (.104)
N OTES:
2X
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H
3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S . TO-220AB Part Marking Information
EX.
IRL2505 Datasheet
