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IRL2703S Datasheet Hexfet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 9.1360 PRELIMINARY l l l l l l IRL2703S HEXFET® Power MOSFET D Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 30V G S RDS(on) = 0.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.

The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4.

Key Features

  • 5 2) 1 .2 2 (.0 4 8) 1 0 .1 6 (.40 0 ) R E F. 4 1 .7 8 (.0 7 0) 1 .2 7 (.0 5 0) 1 2 3 1 5 .4 9 (.61 0 ) 1 4 .7 3 (.58 0 ) 5 .2 8 (.2 0 8) 4 .7 8 (.1 8 8) 1.4 0 (.0 55 ) 1.1 4 (.0 45 ) 2X 5 .0 8 ( .20 0) 2.7 9 ( .1 10 ) 2.2 9 ( .0 90 ) 6.4 7 (.2 55 ) 6.1 8 (.2 43 ) 2.6 1 (.1 0 3) 2.3 2 (.0 9 1) 1.39 (.0 55 ) 1.14 (.0 45 ) 8 .8 9 (.35 0 ) R E F. 3X 0 .93 (.03 7 ) 0 .69 (.02 7 ) 0 .2 5 ( .0 1 0) M A M B 0.5 5 (.0 22 ) 0.4 6 (.0 18 ) N O TES: 1 DIMEN SIO NS AFTER SO LD ER D IP. 2 DIMEN SIO NI.

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