Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
Features
- 5 2) 1 .2 2 (.0 4 8) 1 0 .1 6 (.40 0 ) R E F. 4 1 .7 8 (.0 7 0) 1 .2 7 (.0 5 0) 1 2 3 1 5 .4 9 (.61 0 ) 1 4 .7 3 (.58 0 ) 5 .2 8 (.2 0 8) 4 .7 8 (.1 8 8) 1.4 0 (.0 55 ) 1.1 4 (.0 45 ) 2X
5 .0 8 ( .20 0) 2.7 9 ( .1 10 ) 2.2 9 ( .0 90 )
6.4 7 (.2 55 ) 6.1 8 (.2 43 )
2.6 1 (.1 0 3) 2.3 2 (.0 9 1) 1.39 (.0 55 ) 1.14 (.0 45 ) 8 .8 9 (.35 0 ) R E F. 3X
0 .93 (.03 7 ) 0 .69 (.02 7 )
0 .2 5 ( .0 1 0) M A M B
0.5 5 (.0 22 ) 0.4 6 (.0 18 )
N O TES: 1 DIMEN SIO NS AFTER SO LD ER D IP. 2 DIMEN SIO NI.
IRL2703S Datasheet
