Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- S 1 - G AT E 2 - D RA IN 3 - S OU R C E 4 - D RA IN
14 .09 (.55 5) 13 .47 (.53 0)
4 .06 (.16 0) 3 .55 (.14 0)
3X 3X 1 .40 (.05 5) 1 .15 (.04 5)
0.93 (.037 ) 0.69 (.027 ) M B A M
3X
0.55 (.02 2) 0.46 (.01 8)
0.36 (.01 4)
2 .54 (.10 0) 2X N O TE S: 1 D IM EN S IO N ING & TOL ER A NC IN G P ER A N SI Y 14 .5 M, 19 82. 2 C O N TRO LLIN G D IME N S IO N : INC H
2 .9 2 (.11 5) 2 .6 4 (.10 4)
3 O U TLIN E C ON F OR MS TO JE DE C O UT LIN E TO -2 20A B . 4 HE A TS INK & LE AD M E AS U RE M E N.
IRL2910 Datasheet
