Datasheet Details
| Part number | IRL2910 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 124.56 KB |
| Description | HEXFET Power MOSFET |
| Datasheet | IRL2910_InternationalRectifier.pdf |
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Overview: PD - 91375B IRL2910 HEXFET® Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche.
| Part number | IRL2910 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 124.56 KB |
| Description | HEXFET Power MOSFET |
| Datasheet | IRL2910_InternationalRectifier.pdf |
|
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l l D VDSS = 100V RDS(on) = 0.026Ω G ID = 55A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
Compare IRL2910 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRL2910 | N-Channel MOSFET | INCHANGE |
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IRL2910L | N-Channel MOSFET | INCHANGE |
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IRL2910PBF | N-Channel 100V MOSFET | VBsemi |
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IRL2910S | N-Channel MOSFET | INCHANGE |
| Part Number | Description |
|---|---|
| IRL2910L | Power MOSFET |
| IRL2910LPbF | HEXFET Power MOSFET |
| IRL2910PBF | Power MOSFET |
| IRL2910S | Power MOSFET |
| IRL2910SPbF | HEXFET Power MOSFET |
| IRL2203N | Power MOSFET |
| IRL2203NL | Power MOSFET |
| IRL2203NLPbF | Power MOSFET |
| IRL2203NPBF | Power MOSFET |
| IRL2203NS | Power MOSFET |