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IRL2910L - Power MOSFET

Download the IRL2910L datasheet PDF. This datasheet also covers the IRL2910S variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

extremely low on-resistance per silicon area.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRL2910S-InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRL2910L N-Channel MOSFET INCHANGE
IRL2910 N-Channel MOSFET INCHANGE
IRL2910PBF N-Channel 100V MOSFET VBsemi
IRL2910S N-Channel MOSFET INCHANGE
IRL2203N N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRL2910LPbF HEXFET Power MOSFET
IRL2910 HEXFET Power MOSFET
IRL2910PBF Power MOSFET
IRL2910S Power MOSFET
IRL2910SPbF HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
l Logic-Level Gate Drive l Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching G l Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on- resistance in any existing surface mount package.