IRL2910SPbF - HEXFET Power MOSFET

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

• L INE "L " N ote: "P " in as s embly line pos ition indicates "L ead-F ree" OR IN T E R N AT ION AL R E CT IF IE R L OGO AS S E MB L Y L OT COD E F 530S P AR T NU MB E R D AT E COD E YE AR 0 = 2 000 WEEK 02 LINE L INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB L Y L OT CODE F 530S P AR T N U MB E R DAT E CODE P = DE S IGN AT E S L E AD-F R E E P R ODU CT (OPT IONAL ) YE AR 0 = 2000 WE E K 02 A = AS S E MB L Y S IT E CODE TO-262 Package Outline IRL2910S/LPbF TO-262 Part Marking Informa.