IRL3102SPBF Description
PD- 95589 IRL3102SPbF HEXFET® Power MOSFET D VDSS = 20V RDS(on) = 0.013Ω G Lead-Free S ID = 61A .irf. 1 07/20/04 IRL3102SPbF Ω 2 .irf. IRL3102SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer + + - dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T.