IRL3103L Overview
l l IRL3103S IRL3103L HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 12mΩ Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable...
IRL3103L Key Features
- Low-profile through-hole (IRL3103L)
- 175°C Operating Temperature
- Fast Switching
