Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- >.
- VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs
www. irf. com
7
IRL3103S/IRL3103L
D2Pak Package Outline
1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) M AX. -A2
4 .6 9 (.18 5) 4 .2 0 (.16 5)
-B1.3 2 (.05 2) 1.2 2 (.04 8)
10 .1 6 (.4 00 ) R E F. 6.47 (.2 55 ) 6.18 (.2 43 ) 1 5.49 (.6 10) 1 4.73 (.5 80) 5.28 (.2 08 ) 4.78 (.1 88 ) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) 8.8 9 (.3 50 ) R E F.
IRL3103L Datasheet
