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IRL3103S - Power MOSFET

Download the IRL3103S datasheet PDF. This datasheet also covers the IRL3103L variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

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  • VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For N-channel HEXFET® power MOSFETs www. irf. com 7 IRL3103S/IRL3103L D2Pak Package Outline 1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) M AX. -A2 4 .6 9 (.18 5) 4 .2 0 (.16 5) -B1.3 2 (.05 2) 1.2 2 (.04 8) 10 .1 6 (.4 00 ) R E F. 6.47 (.2 55 ) 6.18 (.2 43 ) 1 5.49 (.6 10) 1 4.73 (.5 80) 5.28 (.2 08 ) 4.78 (.1 88 ) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) 8.8 9 (.3 50 ) R E F.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRL3103L_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IRL3103S N-Channel MOSFET INCHANGE
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IRL3705N N-Channel MOSFET INCHANGE
IRL3705NL N-Channel MOSFET INCHANGE
IRL3705NPBF N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRL3103SPBF Power MOSFET
IRL3103 Power MOSFET
IRL3103D1 MOSFET & SCHOTTKY RECTIFIER
IRL3103D1PBF MOSFET & SCHOTTKY RECTIFIER
IRL3103D1S MOSFET & SCHOTTKY RECTIFIER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PD - 94162 Advanced Process Technology Surface Mount (IRL3103S) l Low-profile through-hole (IRL3103L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l l IRL3103S IRL3103L HEXFET® Power MOSFET D VDSS = 30V RDS(on) = 12mΩ Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. G S ID = 64A The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4.