IRL3302SPBF - HEXFET Power MOSFET

International Rectifier (now Infineon)

Datasheet Details

Part number	IRL3302SPBF
Manufacturer	International Rectifier (now Infineon)
File Size	342.59 KB
Description	HEXFET Power MOSFET
Datasheet	IRL3302SPBF Datasheet

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Other Datasheets by International Rectifier (now Infineon)

Part Number	Description
IRL3302S	HEXFET Power MOSFET
IRL3302	HEXFET Power MOSFET
IRL3302PBF	Power MOSFET
IRL3303	HEXFET POWER MOSFET
IRL3303L	HEXFET Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD- 95587 IRL3302SPbF HEXFET® Power MOSFET D VDSS = 20V RDS(on) = 0.020Ω G Lead-Free S ID = 39A www.DataSheet4U.com www.irf.com 1 07/20/04 IRL3302SPbF Ω 2 www.irf.com IRL3302SPbF www.irf.com 3 IRL3302SPbF 4 www.irf.com IRL3302SPbF www.irf.com 5 IRL3302SPbF 6 www.irf.com IRL3302SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + + - • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test + - * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D= P.W. Period VGS=10V D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T.